Chinese Researchers Make Significant Advances in Semiconductor Technology Inspired by DRAM Principles

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August 21, 2025

Chinese Researchers Make Significant Advances in Semiconductor Technology Inspired by DRAM Principles

A research team led by Professors from Fudan University and The Hong Kong Polytechnic University has developed a groundbreaking biomimetic neuron structure using wafer-scale two-dimensional semiconductor materials, mimicking biological neuron behaviors. This innovation integrates intrinsic plasticity, spike-timing encoding, and visual adaptation within a single hardware unit, paving the way for more efficient edge-intelligent systems capable of real-time data processing. The newly designed bio-inspired neural network (BioNN) enhances image recognition capabilities by merging perception, memory, and computation, making it suitable for applications in autonomous driving, smart healthcare, and brain-machine interfaces. This advancement not only promises energy-efficient AI computation but also aims to facilitate the industrial application of 2D semiconductors, pushing neuromorphic computing closer to biological realism.

Original source:

https://www.trendforce.com/news/2025/08/21/news-chinese-research-team-achieves-new-breakthrough-in-semiconductor-based-on-dram-principle/

Chinese Researchers Make Significant Advances in Semiconductor Technology Inspired by DRAM Principles

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