Enhancements in Bandgap and Device Design Elevate DUV LED Efficiency

Researchers from Wuhan University have developed a novel method to enhance the efficiency of AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) by integrating tailored quantum wells and a SiO2 insertion structure. This innovative approach combines bandgap engineering with device fabrication techniques to mitigate the quantum-confined Stark effect (QCSE), thereby improving the radiative recombination and light extraction efficiencies of the LEDs. The new design not only optimizes current distribution in the active region but also effectively directs emitted light, achieving an impressive external quantum efficiency that is 4.5 times greater than traditional mercury lamp counterparts. Operating at 850 mA, the DUV LEDs offer a light output power of up to 140.1 mW, pointing to promising applications in fields such as biomedical testing and water/air purification. The findings are documented in the recently published study in Microsystems & Nanoengineering.

Enhancements in Bandgap and Device Design Elevate DUV LED Efficiency

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