Integrated Photodiode and RRAM Array for Energy-Efficient In-Sensor Computing

Researchers have developed a novel photodiode-resistive random access memory (PD-RRAM) cell that integrates light detection with programmable resistance for enhanced optoelectronic applications. Unlike conventional photovoltaic devices that exhibit constant photo-responsivity, the PD-RRAM cell allows for electrically modulated responsivity by adjusting the resistance of the RRAM component, thereby enabling tunable outputs across three operational modes: detecting, writing, and reading. Each cell comprises a p-i-n structured photodiode and HfO2-based RRAMs, arranged into a 3×3 pixel array. This innovative architecture supports programmable optoelectronic outputs and rapid transient response, making it suitable for image recognition tasks through in-sensor computing. The system has demonstrated high accuracy in classifying optical inputs, with potential applications in real-time image processing. Robustness against noise and errors is also emphasized, suggesting that the PD-RRAM arrays could further advance optoelectronic computing technologies.

Integrated Photodiode and RRAM Array for Energy-Efficient In-Sensor Computing

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