Seminar Featuring Hiroshi Amano from Nagoya

Professor Hiroshi Amano emphasized the urgent need for advancing research and development of wide-bandgap (WBG) and ultrawide-bandgap (UWBG) semiconductors, particularly GaN and AlN, highlighting their significant contributions to energy savings in LED lighting. Beyond lighting, switching to GaN-based power devices could reduce overall electricity consumption by 25%, making them essential for renewable energy grids due to their efficiency and high-voltage capabilities. The successful commercialization of these semiconductors hinges on establishing mass production technologies compatible with existing silicon-based processes. Current challenges include repairing damage caused by ion implantation in compound semiconductors and forming stable low-resistance ohmic contacts. Amano’s work at Nagoya University focuses on overcoming these challenges to foster the early adoption of high-performance devices crucial for future energy solutions.

Seminar Featuring Hiroshi Amano from Nagoya

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